In this paper, simulation of InAs/GaAs quantum dot laser is performed based on the set of rate equations for carriers and photons in five energy states. Carriers and photons dynamics are analyzed in a quantum dot laser and the set of rate equations for carriers and photons are solved using the 4th order Runge-Kutta numerical solution method. Considering the wide applications of semiconductor lasers and especially, quantum dot lasers in the aviation industry, simulation and modeling of this laser before the construction and production is essential to reduce cost and time. The wavelength of the quantum dot laser investigated in this paper is in the second telecommunication window, so it leads to wide applications of this laser in optical telecommunications, communications, and photonics. It is shown that by increasing the injected current to the laser active layer, the turn-on time and stability time of the system decrease and the peak power and stable power increase. Also, photon emission in each level starts when the lower level reaches its saturation situation. P-I characteristic curve for ground, first excited, and second excited states along with laser output power are presented. By comparing the P-I characteristic curve for two laser active layer structures, the advantages and disadvantages of the existence of the barrier layer in the manufacturing process of the quantum dot laser are discussed.